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Therefore, at the same flow rate, the junction temperature of the optimized IGBT model is lower than before optimization. Author Contributions. Funding. Conflicts of Interest. References. IGBT Modules up to 4500 V / 6500 V. Our portfolio of 4500 V and 6500 V IGBT power modules comprises different configurations, current ratings as well as IGBT chip generations. Esporte.com apostar.Na Rússia, em 2018, ainda antes de Mancini, os italianos também não conseguiram se classificar. Defensores : Francesco Acerbi (Inter), Alessandro Bastoni (Inter), Leonardo Bonucci (Juventus), Giovanni Di Lorenzo (Napoli), Federico Dimarco (Inter), Matteo Darmian (Inter), Leonardo Spinazzola (Roma), Rafael Tolói (Atalanta); Tudo que sabemos sobre o jogo entre Espanha x Itália.
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The IGBT can be thought of as a special switch with the advantages of voltage control, low saturation pressure drop and high voltage withstand. The IGBT module generates a great deal of heat during the working process. If the heat is not conducted in time, it will burn the IGBT module. Com a facilidade de acesso aos smartphones e tablets, limites de jogo no casino ggbet 25 euro bez depozytu online ice ice yeti você pode trocá-los por um bom bônus. In order to address aforementioned issue, two different types of heat dissipating fins are designed in this paper. The heat dissipation characteristics of the IGBT modules under different factors are studied. The temperature variation law of the IGBT module is obtained. The analysis results demonstrate the feasibility of the newly designed heat-dissipating fins in practical applications. A simplified model of an IGBT module is established by the three-dimensional software UG. As shown in Figure 1 , the model mainly includes one aluminum substrate, four main chips and 19 copper heat-dissipating fins. The length of the substrate is 214 mm, the width is 98 mm, the height is 4 mm; the length of the main chip is 30 mm, the width is 16 mm, the height is 1.5 mm.

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